Title :
Fully implanted and zero thermal budget technology for silicon based monolithic power integrated circuits
Author :
Patti, D. ; Sanfilippo, D.
Author_Institution :
STMicroelectronics, Catania, Italy
fDate :
6/23/1905 12:00:00 AM
Abstract :
A new technology for monolithic smart power circuits has been obtained by the extensive use of ion implantation with a wide range of energy and rapid thermal processes. Using the new technology to realize power devices with comparable or better performance than standard devices employing epitaxial technology is possible. A two micron thick silicon dioxide layer is formed on the wafer. After a photolithographic process, boron is implanted by multiple implantations technique
Keywords :
boron; elemental semiconductors; ion implantation; monolithic integrated circuits; power integrated circuits; rapid thermal annealing; silicon; 2 micron; Si:B; fully implanted technology; ion implantation; rapid thermal annealing; silicon based monolithic power integrated circuits; smart power circuits; zero thermal budget technology; Dielectrics and electrical insulation; Epitaxial layers; Implants; Integrated circuit technology; Ion implantation; Isolation technology; Power integrated circuits; Rapid thermal processing; Silicon; Temperature;
Conference_Titel :
Power Electronics Specialists Conference, 2001. PESC. 2001 IEEE 32nd Annual
Conference_Location :
Vancouver, BC
Print_ISBN :
0-7803-7067-8
DOI :
10.1109/PESC.2001.954441
