Title :
Design issues of direct conversion radio frequency receivers in SiGe technology
Author :
Salmeh, Roghoyeh ; Maundy, Brent J. ; Johnston, Ronald H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Calgary Univ., Alta., Canada
Abstract :
The paper describes the design issues of direct conversion RF receivers for WLAN systems using SiGe technology. For direct conversion transceivers, SiGe BiCMOS technology offers a combination of enhanced RF performance with advanced silicon technology. Simulated performance parameters of an active direct down conversion mixer using SiGe BiCMOS MMIC technology are presented. The mixer functions at 5 GHz and draws only 10.2 mW from a 3 V supply. The overall conversion gain of the circuit is 8.5 dB.
Keywords :
Ge-Si alloys; MMIC frequency convertors; MMIC mixers; integrated circuit design; radio receivers; transceivers; wireless LAN; 10.2 mW; 3 V; 5 GHz; 8.5 dB; BiCMOS technology; MMIC technology; SiGe; WLAN systems; active direct down conversion mixer; conversion gain; direct conversion RF receivers; direct conversion radiofrequency receivers; direct conversion transceivers; BiCMOS integrated circuits; Circuit simulation; Germanium silicon alloys; Mixers; Paper technology; Radio frequency; Receivers; Silicon germanium; Transceivers; Wireless LAN;
Conference_Titel :
Electrical and Computer Engineering, 2004. Canadian Conference on
Print_ISBN :
0-7803-8253-6
DOI :
10.1109/CCECE.2004.1344958
