DocumentCode
1596921
Title
Circuit simulator models for the diode and IGBT with full temperature dependent features
Author
Palmer, P.R. ; Joyce, J.C. ; Eng, P.Y. ; Hudgins, J. ; Santi, E. ; Dougal, R.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
Volume
4
fYear
2001
fDate
6/23/1905 12:00:00 AM
Firstpage
2171
Abstract
The problems faced in generating analytical models for the IGBT and power diode are devising correct equations and determining realistic boundary conditions, especially for 2D features, while ensuring convergence of the models. These issues are addressed in this paper in relation to the temperature dependent modelling of IGBTs and diodes
Keywords
SPICE; circuit simulation; insulated gate bipolar transistors; power semiconductor diodes; semiconductor device models; 2D features; IGBT; PSPICE implementation; circuit simulator models; diode; distributed charge simulation; models convergence; realistic boundary conditions; temperature dependent modelling; Analytical models; Boundary conditions; Charge carrier processes; Circuit simulation; Computational modeling; Equations; Insulated gate bipolar transistors; Semiconductor diodes; Spontaneous emission; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 2001. PESC. 2001 IEEE 32nd Annual
Conference_Location
Vancouver, BC
ISSN
0275-9306
Print_ISBN
0-7803-7067-8
Type
conf
DOI
10.1109/PESC.2001.954442
Filename
954442
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