Title :
High frequency hydrogen-terminated diamond field effect transistor technology
Author :
Moran, David A J ; Russell, Stephen A O ; Sharabi, Salah ; Tallaire, Alexandre
Author_Institution :
Univ. of Glasgow, Glasgow, UK
Abstract :
We report on the fabrication and characterization of 120 nm and 50nm gate length hydrogen-terminated diamond field effect transistors. DC operation and performance Reduction of gate length from 120 nm to 50 nm is found to increase the extrinsic cut-off frequency (fT) from 43 GHz to 53 GHz. We believe this to be the highest cut-off frequency yet reported for a diamond based transistor.
Keywords :
diamond; hydrogen; millimetre wave field effect transistors; DC operation; frequency 43 GHz; frequency 53 GHz; hydrogen-terminated diamond field effect transistor technology; performance reduction; size 120 nm; size 50 nm; Diamond-like carbon; FETs; Gold; Logic gates; Performance evaluation; Resistance; Surface treatment;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-4673-2198-3
DOI :
10.1109/NANO.2012.6321925
