Title :
Fabrication of 4H-SiC Schottky barrier diodes with the epilayer grown by Bis-trimethylsilylmethane precursor
Author :
Oh, Myeong Sook ; Song, Ho Keun ; Moon, Jeong Hyun ; Jeong Hyuk Yim ; Lee, Jong Ho ; Seo, Han Seok ; Choi, Yu Jin ; Kim, Hyeong Joon
Author_Institution :
Dept. of Mater. Sci. & Eng., Seoul Nat. Univ., Seoul
Abstract :
The authors fabricated the 4H-SiC Schottky barrier diodes (SBDs) with the epilayers grown using the MOCVD. Bis-trimethylsilylmethane (BTMSM, [C7H20Si2]) was used as a single precursor for Si and C sources.
Keywords :
Schottky diodes; 4H-SiC Schottky barrier diodes; Bis-trimethylsilylmethane precursor; C7H20Si2; MOCVD; Crystallography; Fabrication; Optical microscopy; Pollution measurement; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Substrates; Temperature;
Conference_Titel :
Power Electronics, 2007. ICPE '07. 7th Internatonal Conference on
Conference_Location :
Daegu
Print_ISBN :
978-1-4244-1871-8
Electronic_ISBN :
978-1-4244-1872-5
DOI :
10.1109/ICPE.2007.4692382
