DocumentCode
1597841
Title
High precision positioning of plasmonic nanoparticle based on damascene process
Author
Häringer, Daniel ; Chen, Gang ; Jakobs, Peter ; Yarema, Maksym ; Heiss, Wolfgang ; Kohl, Manfred
Author_Institution
Inst. of Microstructure Technol., Karlsruhe Inst. of Technol. (KIT), Eggenstein-Leopoldshafen, Germany
fYear
2012
Firstpage
1
Lastpage
4
Abstract
Nanoparticle positioning by a silicon pore array template with decreasing pore diameter down to 16 nm opens up a new way of fabrication of metal nanostructures based on high precision dry etching of silicon. We demonstrate how this process can be used to fabricate plasmonic nano-structures. Plasmonic dipole structures are presented with variable gap size below 20 nm.
Keywords
electron beam lithography; elemental semiconductors; etching; nanofabrication; nanoparticles; nanoporous materials; plasmonics; porosity; silicon; Si; damascene process; electron beam lithography; high precision dry etching; metal nanostructures; nanoparticle positioning; plasmonic dipole structures; plasmonic nanoparticle; pore diameter; silicon pore array template; variable gap size; Fabrication; Lithography; Nanoparticles; Plasmons; Resists; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location
Birmingham
ISSN
1944-9399
Print_ISBN
978-1-4673-2198-3
Type
conf
DOI
10.1109/NANO.2012.6321960
Filename
6321960
Link To Document