Contact resistance of low-temperature carbon nanotube vertical interconnects

Author

Vollebregt, Sten ; Chiaramonti, Ann N. ; Ishihara, Ryoichi ; Schellevis, Hugo ; Beenakker, Kees

Author_Institution

Delft Inst. of Microsyst. & Nanoelectron., Delft Univ. of Technol., Delft, Netherlands

fYear

2012

Firstpage

1

Lastpage

5

Abstract

The electrical contact resistance and length dependant resistance of vertically aligned carbon nanotubes (CNT) grown at 500 °C with high tube density (10¹¹ cm^-2) are investigated by measuring samples with different CNT lengths. Cross-sectional imaging revealed that the CNT tips are well embedded over a length of several hundred nm. The determined contact resistance of 18 kΩ is low, which is attributed to a combination of CNT tip embedding and tip growth mechanism. When the CNT mean free path determined by Raman spectroscopy is compared with that obtained from the electrical measurements, it shows that multiple walls are conducting in parallel per CNT.

Keywords

carbon nanotubes; contact resistance; CNT mean free path; CNT tip embedding; CNT tip growth mechanism; Raman spectroscopy; cross-sectional imaging; electrical contact resistance; electrical measurement; high tube density; length dependant resistance; low-temperature carbon nanotube; resistance 18 kohm; temperature 500 C; vertical interconnects; vertically aligned carbon nanotube; Artificial intelligence; Logic gates; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on

Conference_Location

Birmingham

ISSN

1944-9399

Print_ISBN

978-1-4673-2198-3

Type

conf

DOI

10.1109/NANO.2012.6321985

Filename

6321985