Title :
Contact resistance of low-temperature carbon nanotube vertical interconnects
Author :
Vollebregt, Sten ; Chiaramonti, Ann N. ; Ishihara, Ryoichi ; Schellevis, Hugo ; Beenakker, Kees
Author_Institution :
Delft Inst. of Microsyst. & Nanoelectron., Delft Univ. of Technol., Delft, Netherlands
Abstract :
The electrical contact resistance and length dependant resistance of vertically aligned carbon nanotubes (CNT) grown at 500 °C with high tube density (1011 cm-2) are investigated by measuring samples with different CNT lengths. Cross-sectional imaging revealed that the CNT tips are well embedded over a length of several hundred nm. The determined contact resistance of 18 kΩ is low, which is attributed to a combination of CNT tip embedding and tip growth mechanism. When the CNT mean free path determined by Raman spectroscopy is compared with that obtained from the electrical measurements, it shows that multiple walls are conducting in parallel per CNT.
Keywords :
carbon nanotubes; contact resistance; CNT mean free path; CNT tip embedding; CNT tip growth mechanism; Raman spectroscopy; cross-sectional imaging; electrical contact resistance; electrical measurement; high tube density; length dependant resistance; low-temperature carbon nanotube; resistance 18 kohm; temperature 500 C; vertical interconnects; vertically aligned carbon nanotube; Artificial intelligence; Logic gates; Thermal conductivity;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-4673-2198-3
DOI :
10.1109/NANO.2012.6321985
