DocumentCode
1598471
Title
Dielectric properties of polydicyclopentadiene and polydicyclopentadiene-silica nanocomposite
Author
Yin, Weijun ; Kniajanski, Sergei ; Amm, Bruce
Author_Institution
GE Global Res. Center, Niskayuna, NY, USA
fYear
2010
Firstpage
1
Lastpage
5
Abstract
Conventional thermoset materials, such as epoxy, polyester, silicone and polyurethane, have relatively high dielectric losses and high dielectric constants, which are not desirable for a high frequency and high voltage application. Polydicyclopentadiene (PDCPD) is a polyolefinic thermoset material that has outstanding dielectric characteristics: low dielectric constant, low dielectric loss and high breakdown strength that are similar to polypropylene but higher thermal stability similar to epoxy. In addition, it also has great mechanical strength and fracture toughness. Due to its extremely low viscosity, PDCPD is easy to process and has flexibility for various reaction injection moldings. Dielectric performance, such as corona resistance, is further enhanced by PDCPD-nanosilica composites. In this paper, dielectric properties of PDCPD will be presented and discussed.
Keywords
dielectric losses; electric strength; fracture toughness; mechanical strength; nanocomposites; permittivity; polymers; thermal stability; PDCPD-nanosilica composites; corona resistance; dielectric properties; epoxy; extreme low viscosity; fracture toughness; high breakdown strength; high dielectric constants; high dielectric losses; low dielectric constant; low dielectric loss; mechanical strength; polydicyclopentadiene nanocomposite; polydicyclopentadiene-silica nanocomposite; polyester; polyolefinic thermoset material; polyurethane; reaction injection moldings; silicone; thermal stability; Dielectric breakdown; Dielectric constant; Dielectric losses; Dielectric materials; Frequency; High-K gate dielectrics; Injection molding; Thermal stability; Viscosity; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulation (ISEI), Conference Record of the 2010 IEEE International Symposium on
Conference_Location
San Diego, CA
ISSN
1089-084X
Print_ISBN
978-1-4244-6298-8
Type
conf
DOI
10.1109/ELINSL.2010.5549749
Filename
5549749
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