Realization of fully tunable FinFET double quantum dots with close proximity plunger gates

Author

Alkhalil, Feras M. ; Perez-Barraza, Julia I. ; Husain, Muhammad K. ; Lin, Yun P. ; Lambert, Nick ; Chong, Harold M H ; Tsuchiya, Yoshishige ; Williams, David A. ; Ferguson, Andrew J. ; Mizuta, Hiroshi

Author_Institution

Sch. of Electron. & Comput. Sci., Univ. of Southampton, Southampton, UK

fYear

2012

Firstpage

1

Lastpage

4

Abstract

This paper presents the realization of a FinFET double quantum dots transistor on ultrathin silicon-on-insulator. In this platform, three Al FinFET gates surround the Si device layer channel forming electrically tunable potential barriers; Si plunger side gates are included to enable precise control of the quantum dots potential. This device is fabricated using a multi-layer electron beam lithography process that is fully compatible with metal oxide semiconductor technology. Low temperature electrical measurements and coulomb oscillation characteristics have demonstrated the capability of this structure to form double quantum dots with adjustable interdot coupling.

Keywords

MOSFET; aluminium; electron beam lithography; quantum dots; silicon-on-insulator; Al; Al FinFET gates; Si; Si device layer channel; Si plunger side gates; close proximity plunger gates; coulomb oscillation; electrically tunable potential barriers; fully tunable FinFET double quantum dots; low temperature electrical measurements; metal oxide semiconductor technology; multilayer electron beam lithography; ultrathin silicon-on-insulator; Analytical models; Capacitance; FinFETs; Oscillators; Substrates; Al FinFET gates; Si double quantum dot; Si plunger gates; Si spin qubits; tunable interdot coupling;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on

Conference_Location

Birmingham

ISSN

1944-9399

Print_ISBN

978-1-4673-2198-3

Type

conf

DOI

10.1109/NANO.2012.6321993

Filename

6321993