DocumentCode
1598945
Title
A novel technique for non-volatile digital data storage
Author
Schoeman, Justin F. ; Joubert, Trudi-H ; Van Der Westhuizen, Gerhardus
Author_Institution
Electr., Electron. & Comput. Eng., Pretoria Univ., South Africa
Volume
2
fYear
1999
fDate
6/21/1905 12:00:00 AM
Firstpage
1161
Abstract
A novel technique for non-volatile digital data storage is presented. Data storage is implemented using bipolar transistors manufactured in a standard CMOS process. The technique can operate at lower voltages than conventional standard-CMOS EEPROM devices. This technique can also be used for non-volatile analogue data storage and can be implemented in BiCMOS or bipolar processes as well as standard-CMOS, allowing for the production of cheap embedded EEPROMs
Keywords
EPROM; analogue storage; integrated memory circuits; BiCMOS process; bipolar process; bipolar transistors; embedded EEPROM devices; nonvolatile digital data storage; standard CMOS process; Annealing; Bipolar transistors; CMOS process; Data engineering; Electron devices; Heating; Hot carriers; Memory; Temperature; Thermal degradation;
fLanguage
English
Publisher
ieee
Conference_Titel
Africon, 1999 IEEE
Conference_Location
Cape Town
Print_ISBN
0-7803-5546-6
Type
conf
DOI
10.1109/AFRCON.1999.821942
Filename
821942
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