NV-DICE: A Ferroelectric Nonvolatile DICE Storage Element for Tolerance to Single Event Upsets

This paper proposes a new nonvolatile Dual Interlocked Cell (NV-DICE) storage element. The cell includes a DICE latch and four backup ferroelectric capacitors. It can perform store automatically when the power is off abruptly and has high tolerance to SEU. READ and WRITE operations in this cell were simulated by HSIM. Single Event Upset (SEU) of the cell were simulated by Sentaurus simulation tools at 0.13μm feature size. The developed NV-DICE can be applied to nonvolatile FPGA and standard ASICs which require high tolerance to SEU.