DocumentCode
1599088
Title
FOXFET in PIN diode strip detector [X-ray mammography]
Author
Vrtacnik, D. ; Krizaj, D. ; Resnik, D. ; Amon, S.
Author_Institution
Lab. of Microsensor Structures, Fac. of Electr. Eng., Ljubljana, Slovenia
Volume
2
fYear
1999
fDate
6/21/1905 12:00:00 AM
Firstpage
1189
Abstract
Simulation and operation of a field oxide FET (FOXFET) biasing structure in a fabricated AC coupled single-sided strip detector are presented. The spatial distribution of the current density was explained by examination of the electric potential distribution and carrier concentration in the channel region of the FOXFET. The results presented confirm that incorporation of the FOXFET biasing structure is justified
Keywords
MOSFET; X-ray detection; carrier density; current density; elemental semiconductors; mammography; microstrip components; p-i-n diodes; silicon; silicon radiation detectors; AC coupled single-sided strip detector; FOXFET biasing structure; PIN diode strip detector; Si; X-ray mammography; X-ray strip detector; carrier concentration; channel region; current density; electric potential distribution; full-depletion mode; microstrip detectors; spatial distribution; Electrodes; Energy resolution; Fabrication; Leakage current; Microstrip; Silicon; Strips; Voltage; X-ray detection; X-ray detectors;
fLanguage
English
Publisher
ieee
Conference_Titel
Africon, 1999 IEEE
Conference_Location
Cape Town
Print_ISBN
0-7803-5546-6
Type
conf
DOI
10.1109/AFRCON.1999.821948
Filename
821948
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