DocumentCode
1599119
Title
An improved strategy with transistor re-sizing capability for converting bulk CMOS polygon layout to SOI
Author
Chow, Mike C W ; Chan, Philip C.H.
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
Volume
4
fYear
1996
Firstpage
767
Abstract
The SOI (Silicon On Insulator) CMOS has many potential advantages over the traditional bulk CMOS circuit as it is free of latch-up and has improved performance and higher packing density. With the recent advances in high-quality thin-film SOI wafer technology, it is becoming a viable technology for ULSI. As SOI emerges as an alternate to bulk CMOS for low power and high-speed applications, an automated methodology will expedite the conversion of existing bulk CMOS designs to SOI CMOS
Keywords
CMOS integrated circuits; integrated circuit layout; silicon-on-insulator; ULSI; bulk CMOS polygon layout; low power high-speed circuit; thin-film SOI wafer technology; transistor re-sizing; Automatic control; CMOS technology; Compaction; MOSFETs; Parasitic capacitance; Pins; Silicon on insulator technology; Substrates; Thin film circuits; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1996. ISCAS '96., Connecting the World., 1996 IEEE International Symposium on
Conference_Location
Atlanta, GA
Print_ISBN
0-7803-3073-0
Type
conf
DOI
10.1109/ISCAS.1996.542137
Filename
542137
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