Title :
Coupling analysis of through-silicon via (TSV) arrays in silicon interposers for 3D systems
Author :
Biancun Xie ; Swaminathan, M. ; Ki Jin Han ; Jianyong Xie
Author_Institution :
Interconnect & Packaging Center, Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
This paper investigates the coupling effect between through-silicon vias (TSVs) in large TSV array structures. A coupling analysis method for large TSV arrays is proposed. Using this method the importance of coupling between TSVs for low resistivity silicon substrates is quantified both in the frequency and time domain. This has been compared with high resistivity silicon substrates. The comparison between the two indicates the importance of jitter and voltage analysis in TSV arrays for low resistivity silicon substrates due to enhanced coupling.
Keywords :
electrical resistivity; elemental semiconductors; network analysis; silicon; three-dimensional integrated circuits; 3D systems; Si; TSV; coupling analysis; frequency domain; low resistivity silicon substrates; silicon interposers; through-silicon via arrays; time domain; voltage analysis; Conductivity; Conductors; Couplings; Mathematical model; Silicon; Substrates; Through-silicon vias;
Conference_Titel :
Electromagnetic Compatibility (EMC), 2011 IEEE International Symposium on
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
978-1-4577-0812-1
DOI :
10.1109/ISEMC.2011.6038277
