Alternative integration scheme for half-bridge switch using double etched Si3N4 substrate

The recent research exercises have targeted the transfer of the sandwich package benefits to application bespoke switch design, including flipchip and device stacking topology [1]. This paper will present the work in an alternative integration scheme for a half-bridge switch using 70μm thin Si IGBTs and diodes addressing higher strength, higher toughness and higher thermal conductivity. Using alumina ceramic substrates are prone to failure compared to silicon nitride. The switch is totally wire bond less where bonded wires have large parasitic inductance which deteriorates the electromagnetic performance. In addition to the wire bond, the interconnection pattern plays a great roll of helping the loop current to be entirely vertical.