• DocumentCode
    1599757
  • Title

    ZnO based charge trapping memory with embedded nanoparticles

  • Author

    Rizk, Ayman ; Oruç, Peyza R. ; Okyay, Ali K. ; Nayfeh, Ammar

  • Author_Institution
    Masdar Inst. of Sci. & Technol. Abu Dhabi, Abu Dhabi, United Arab Emirates
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A thin film ZnO charge trapping memory cell with embedded nanoparticles is demonstrated by Physics Based TCAD simulation. The results show 3V increase in the Vt shift due to the nanoparticles for the same operating voltage. In addition a ~6V reduction in the programming voltage is obtained due the nanoparticles. In addition, the effect of the trapping layer and tunnel oxide scaling on the 10 year retention time is studied.
  • Keywords
    nanoparticles; random-access storage; technology CAD (electronics); zinc compounds; ZnO; embedded nanoparticies; physics based TCAD simulation; thin film charge trapping memory cell; time 10 year; trapping layer; tunnel oxide scaling; voltage 3 V; Logic gates; Nanoscale devices; Performance evaluation; Photonic band gap; Zinc oxide; Charge Trapping; Memory; Nano; Nanoparticles; ZnO;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
  • Conference_Location
    Birmingham
  • ISSN
    1944-9399
  • Print_ISBN
    978-1-4673-2198-3
  • Type

    conf

  • DOI
    10.1109/NANO.2012.6322033
  • Filename
    6322033
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1599757