Title :
ZnO based charge trapping memory with embedded nanoparticles
Author :
Rizk, Ayman ; Oruç, Peyza R. ; Okyay, Ali K. ; Nayfeh, Ammar
Author_Institution :
Masdar Inst. of Sci. & Technol. Abu Dhabi, Abu Dhabi, United Arab Emirates
Abstract :
A thin film ZnO charge trapping memory cell with embedded nanoparticles is demonstrated by Physics Based TCAD simulation. The results show 3V increase in the Vt shift due to the nanoparticles for the same operating voltage. In addition a ~6V reduction in the programming voltage is obtained due the nanoparticles. In addition, the effect of the trapping layer and tunnel oxide scaling on the 10 year retention time is studied.
Keywords :
nanoparticles; random-access storage; technology CAD (electronics); zinc compounds; ZnO; embedded nanoparticies; physics based TCAD simulation; thin film charge trapping memory cell; time 10 year; trapping layer; tunnel oxide scaling; voltage 3 V; Logic gates; Nanoscale devices; Performance evaluation; Photonic band gap; Zinc oxide; Charge Trapping; Memory; Nano; Nanoparticles; ZnO;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-4673-2198-3
DOI :
10.1109/NANO.2012.6322033
