DocumentCode :
1600030
Title :
Investigations on the partial discharge behavior of syntactic foam under uniform field stress
Author :
Strauchs, Anja ; Mashkin, Andrey ; Schnettler, Armin ; Podlazly, Jörn ; Freiheit-Jensen, Bernd
Author_Institution :
Inst. for High Voltage Technol., RWTH Aachen Univ., Aachen, Germany
fYear :
2010
Firstpage :
1
Lastpage :
5
Abstract :
This paper deals with the partial discharge behavior of epoxy resin filled with hollow glass microspheres. The resulting material, called syntactic foam, is a new composite insulation material which combines advantages of solid and gaseous dielectrics. Specimens of syntactic foam are stressed with uniform AC field stress and the partial discharge activity is simultaneously measured. After the electrical stress the material structure is visualized by Scanning Electron Microscopy. As an essential result of this investigation a theory of the breakdown process of syntactic foam under uniform field stress is developed. Unexpectedly, the breakdown process differs from the one under non-uniform field stress described.
Keywords :
composite insulating materials; partial discharges; polymer foams; resins; scanning electron microscopy; breakdown process; composite insulation material; electrical stress; epoxy resin; gaseous dielectrics; hollow glass microspheres; material structure; nonuniform field stress; partial discharge activity; scanning electron microscopy; solid dielectrics; syntactic foam; uniform AC field stress; Composite materials; Dielectric materials; Dielectrics and electrical insulation; Electric breakdown; Epoxy resins; Gas insulation; Glass; Partial discharges; Solids; Stress; hollow microsphere; partial discharge; syntactic foam; uniform field stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulation (ISEI), Conference Record of the 2010 IEEE International Symposium on
Conference_Location :
San Diego, CA
ISSN :
1089-084X
Print_ISBN :
978-1-4244-6298-8
Type :
conf
DOI :
10.1109/ELINSL.2010.5549809
Filename :
5549809
Link To Document :
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