Layer-by-layer 3D printing of Si micro- and nanostructures by Si deposition, ion implantation and selective Si etching

Author

Fischer, Andreas C. ; Gylfason, Kristinn B. ; Belova, Lyubov M. ; Malm, B. Gunnar ; Radamson, Henry H. ; Kolahdouz, Mohammadreza ; Rikers, Yuri G M ; Stemme, Goran ; Niklaus, Frank

Author_Institution

Microsyst. Technol. Lab., KTH R. Inst. of Technol., Stockholm, Sweden

fYear

2012

Firstpage

1

Lastpage

4

Abstract

In this paper we report a method for layer-by-layer printing of three-dimensional (3D) silicon (Si) micro- and nanostructures. This fabrication method is based on a sequence of alternating steps of chemical vapor deposition of Si and local implantation of gallium (Ga⁺) ions by focused ion beam (FIB) writing. The defined 3D structures are formed in a final step by selectively wet etching the non-implanted Si in potassium hydroxide (KOH). We demonstrate the viability of the method by fabricating 2 and 3-layer 3D Si structures, including suspended beams and patterned lines with dimensions on the nm-scale.

Keywords

chemical vapour deposition; elemental semiconductors; focused ion beam technology; ion implantation; nanofabrication; nanostructured materials; potassium compounds; silicon; sputter etching; three-dimensional integrated circuits; 3D structures; KOH; Si; chemical vapor deposition; focused ion beam writing; ion implantation; layer-by-layer 3D printing; local implantation; nanostructures; patterned lines; potassium hydroxide; selective wet etching; suspended beams; three-dimensional silicon microstructures; Fabrics; Nanophotonics; 3D Si printing; 3D silicon patterning; MEMS; NEMS; focused ion beam (FIB) writing; ion implantation; microstructures; nanostructures;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on

Conference_Location

Birmingham

ISSN

1944-9399

Print_ISBN

978-1-4673-2198-3

Type

conf

DOI

10.1109/NANO.2012.6322048

Filename

6322048