Title :
Layer-by-layer 3D printing of Si micro- and nanostructures by Si deposition, ion implantation and selective Si etching
Author :
Fischer, Andreas C. ; Gylfason, Kristinn B. ; Belova, Lyubov M. ; Malm, B. Gunnar ; Radamson, Henry H. ; Kolahdouz, Mohammadreza ; Rikers, Yuri G M ; Stemme, Goran ; Niklaus, Frank
Author_Institution :
Microsyst. Technol. Lab., KTH R. Inst. of Technol., Stockholm, Sweden
Abstract :
In this paper we report a method for layer-by-layer printing of three-dimensional (3D) silicon (Si) micro- and nanostructures. This fabrication method is based on a sequence of alternating steps of chemical vapor deposition of Si and local implantation of gallium (Ga+) ions by focused ion beam (FIB) writing. The defined 3D structures are formed in a final step by selectively wet etching the non-implanted Si in potassium hydroxide (KOH). We demonstrate the viability of the method by fabricating 2 and 3-layer 3D Si structures, including suspended beams and patterned lines with dimensions on the nm-scale.
Keywords :
chemical vapour deposition; elemental semiconductors; focused ion beam technology; ion implantation; nanofabrication; nanostructured materials; potassium compounds; silicon; sputter etching; three-dimensional integrated circuits; 3D structures; KOH; Si; chemical vapor deposition; focused ion beam writing; ion implantation; layer-by-layer 3D printing; local implantation; nanostructures; patterned lines; potassium hydroxide; selective wet etching; suspended beams; three-dimensional silicon microstructures; Fabrics; Nanophotonics; 3D Si printing; 3D silicon patterning; MEMS; NEMS; focused ion beam (FIB) writing; ion implantation; microstructures; nanostructures;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-4673-2198-3
DOI :
10.1109/NANO.2012.6322048
