Title :
Bitline separated gated multi-bit (BS-GMB) SONOS for high density flash memory
Author :
Shim, Won Bo ; Kim, Seunghyun ; Kim, Yoon ; Park, Se Hwan ; Kim, Sungjun ; Park, Euyhwan ; Park, Byung-Gook
Author_Institution :
Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea
Abstract :
A novel bitline separated gated multi-bit (BS-GMB) SONOS memory for high density flash memory is newly introduced. Bitline separation method can decrease the number of gate contacts, and simplify the gate contact interconnection. 2N memory nodes with single crystalline silicon channel can be realized in 8F2 size with this structure.
Keywords :
flash memories; BS-GMB SONOS memory; bitline separation method; gate contact interconnection; gated multibit SONOS memory; high density flash memory; single crystalline silicon channel; Flash memory; Logic gates; Periodic structures; SONOS devices; Stacking;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-4673-2198-3
DOI :
10.1109/NANO.2012.6322053
