DocumentCode :
1600375
Title :
A FEM approach to simulate the electronic structure and optical property of InAs/GaAs self-assembled quantum dot
Author :
Lu, Fu-Fa ; Ho, Tsung-Ting ; Kao, Chin-Hsing
Author_Institution :
Dept. of Appl. Phys., Nat. Defense Univ., Taoyuan, Taiwan
fYear :
2004
Firstpage :
3
Lastpage :
4
Abstract :
In this work, a new improved FEM approach is described for analyzing strain distributions, computing electronic structure, and simulating the optical property of InAs/GaAs self-assembled quantum dot. A window-based software FEMLAB has been employed for multiphysics simulation. This approach can be used as a guideline for fast quantum-dot device structure design, especially in quantum dot lasers and quantum dot infrared photodetectors. Furthermore, the proposed approach and model could be used to develop three-dimensional nano-device simulator with further specific device module.
Keywords :
III-V semiconductors; electronic structure; finite element analysis; gallium arsenide; indium compounds; physics computing; self-assembly; semiconductor quantum dots; FEM; FEMLAB; InAs-GaAs; InAs/GaAs quantum dot; electronic structure; multiphysics simulation; optical property; quantum dot infrared photodetectors; quantum dot lasers; quantum-dot device structure design; self-assembled quantum dot; strain distributions; three-dimensional nanodevice simulator; window-based software; Analytical models; Capacitive sensors; Computational modeling; Distributed computing; Gallium arsenide; Optical computing; Quantum computing; Quantum dot lasers; Quantum dots; Self-assembly;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2004. NUSOD '04. Proceedings of the 4th International Conference on
Print_ISBN :
0-7803-8530-6
Type :
conf
DOI :
10.1109/NUSOD.2004.1345081
Filename :
1345081
Link To Document :
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