Title :
Gadolinium scandate by high pressure sputtering as a high-k dielectric
Author :
Feijoo, P.C. ; Pampillon, M.A. ; Andres, E.S.
Author_Institution :
Dipt. Fis. Aplic. III: Electr. y Electron., Univ. Complutense de Madrid, Madrid, Spain
Abstract :
We demonstrate the viability of gadolinium scandate (Gd2-xScxO3) deposition by high pressure sputtering from targets of its binary compounds (gadolinium and scandium oxides), followed by an anneal in forming gas. Pt/8 nm Gd2-xScxO3/n-Si MIS devices were fabricated and characterized. Gadolinium scandate is found to be more stable than ScOx and GdOx in contact with Si. These three dielectrics show a high quality interface, with low leakage currents.
Keywords :
MIS capacitors; annealing; elemental semiconductors; gadolinium compounds; high-k dielectric thin films; leakage currents; platinum; silicon; sputter deposition; MIS devices; Pt-Gd2-xScxO3-Si; annealing; binary compounds; gadolinium oxide; gadolinium scandate; high pressure sputter deposition; high-k dielectric material; leakage currents; scandium oxide; size 8 nm; Annealing; Dielectrics; Leakage current; Logic gates; MIS devices; Permittivity; Silicon; gadolinium scan date; high k dielectrics; high pressure sputtering;
Conference_Titel :
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location :
Valladolid
Print_ISBN :
978-1-4673-4666-5
Electronic_ISBN :
978-1-4673-4667-2
DOI :
10.1109/CDE.2013.6481331
