Effects of Ozone pre-deposition treatment on GaSb MOS capacitors

Author

Zhen Tan ; Lianfeng Zhao ; Ning Cui ; Jing Wang ; Jun Xu

Author_Institution

Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing, China

fYear

2013

Firstpage

21

Lastpage

24

Abstract

GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with Ozone pre-deposition treatment at various temperatures are studied. It is found that Ozone treatment can improve the characteristics of High-k/GaSb MOSCAPs. The Interface Trap Density (Dit) is reduced by 50% after Ozone pre-deposition treatment at 200°C, and gate leakage current is reduced by around 70% after Ozone treatment at 100°C.

Keywords

III-V semiconductors; MOS capacitors; gallium compounds; high-k dielectric thin films; interface states; leakage currents; ozonation (materials processing); GaSb; MOS capacitors; gate leakage current; high-k/GaSb MOSCAP; interface trap density; metal oxide semiconductor capacitors; ozone predeposition treatment effects; temperature 100 degC; temperature 200 degC; Current measurement; Gases; Leakage current; Logic gates; Surface treatment; Temperature measurement; GaSb; Interface Trap Density; Ozone; leakage; pre-deposition;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2013 Spanish Conference on

Conference_Location

Valladolid

Print_ISBN

978-1-4673-4666-5

Electronic_ISBN

978-1-4673-4667-2

Type

conf

DOI

10.1109/CDE.2013.6481332

Filename

6481332