Title :
Effects of Ozone pre-deposition treatment on GaSb MOS capacitors
Author :
Zhen Tan ; Lianfeng Zhao ; Ning Cui ; Jing Wang ; Jun Xu
Author_Institution :
Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing, China
Abstract :
GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with Ozone pre-deposition treatment at various temperatures are studied. It is found that Ozone treatment can improve the characteristics of High-k/GaSb MOSCAPs. The Interface Trap Density (Dit) is reduced by 50% after Ozone pre-deposition treatment at 200°C, and gate leakage current is reduced by around 70% after Ozone treatment at 100°C.
Keywords :
III-V semiconductors; MOS capacitors; gallium compounds; high-k dielectric thin films; interface states; leakage currents; ozonation (materials processing); GaSb; MOS capacitors; gate leakage current; high-k/GaSb MOSCAP; interface trap density; metal oxide semiconductor capacitors; ozone predeposition treatment effects; temperature 100 degC; temperature 200 degC; Current measurement; Gases; Leakage current; Logic gates; Surface treatment; Temperature measurement; GaSb; Interface Trap Density; Ozone; leakage; pre-deposition;
Conference_Titel :
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location :
Valladolid
Print_ISBN :
978-1-4673-4666-5
Electronic_ISBN :
978-1-4673-4667-2
DOI :
10.1109/CDE.2013.6481332
