Characterization of large area Cu(In,Ga)Se2 nanotip arrays via photoluminescence

Author

Liao, Yu-Kuang ; Lin, Woei-Tyng ; Hsieh, Dan-Hua ; Kuo, Shou-Yi ; Lai, Fang-I ; Chueh, Yu-Lun ; Kuo, Hao-Chung

Author_Institution

Dept. of Electro-Phys., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

fYear

2012

Firstpage

1

Lastpage

2

Abstract

In this study, photoluminescence (PL) measurements were used to characterized Cu(In,Ga)Se₂ nanotip arrays (CIGS NTRs). Large area CIGS NTRs were yielded by using one step Ar⁺ milling process without template. Formation mechanism of NTRs is due to a highly anisotropic milling effect of the quaternary components compound. In both CIGS thin films with and without NTRs, saturation effects of Donor-Acceptor Pair (DAP) had been observed while excitation power dependence PL measurements. Comparing with thin film CIGS without NTRs, it has revealed that the concentration DAP had been changed after formation of CIGS NTRs and had enhanced its carrier density of the p-type semiconductor.

Keywords

carrier density; copper compounds; gallium compounds; indium compounds; milling; nanofabrication; nanostructured materials; photoluminescence; semiconductor growth; semiconductor thin films; Cu(InGa)Se₂; carrier density; donor-acceptor pair; excitation power; highly anisotropic milling effect; large area nanotip arrays; one step Ar⁺ milling process; p-type semiconductor; photoluminescence; quaternary components compound; thin films; Charge carrier density; Density measurement; Films; Milling; Photovoltaic cells; Power measurement; Temperature measurement; CIGS; nanotips; photoluminescence; saturation;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on

Conference_Location

Birmingham

ISSN

1944-9399

Print_ISBN

978-1-4673-2198-3

Type

conf

DOI

10.1109/NANO.2012.6322062

Filename

6322062