DocumentCode
1600541
Title
Modeling of radiation effects in MOSFETs
Author
Banqueri, J. ; Carvajal, M.A. ; Palma, Alberto J.
Author_Institution
Dept. of Electron. & Comput. Technol., Univ. of Granada, Granada, Spain
fYear
2013
Firstpage
33
Lastpage
36
Abstract
In this paper, the advances in the modeling of the radiation effects in MOSFETs will be briefly exposed. The change of the threshold voltage, mobility, subthreshold swing and the low frequency noise with the ionizing radiation will be shown and, if possible, modeled. Finally, the use of the MOSFET as dosimeter, mainly for clinical use, will be detailed, where our contribution in the readout techniques will be detailed in order to obtain a low-cost high performance dosimetric verification system.
Keywords
MOSFET; dosimetry; radiation hardening (electronics); semiconductor device models; MOSFET; dosimetric verification system; ionizing radiation; low frequency noise; mobility; radiation effect modeling; readout technique; subthreshold swing; threshold voltage; Fading; MOSFETs; Radiation effects; Sensitivity; Threshold voltage; Voltage measurement; MOSFET; dosimetry; fading; ionizing radiation; threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location
Valladolid
Print_ISBN
978-1-4673-4666-5
Electronic_ISBN
978-1-4673-4667-2
Type
conf
DOI
10.1109/CDE.2013.6481335
Filename
6481335
Link To Document