Subthreshold response of a MOSFET to radiation effects

Author

Banqueri, J. ; Carvajal, M.A. ; Martinez-Garcia, S. ; Palma, Alberto J. ; Vilches, M. ; Lallena, A.M.

Author_Institution

Dept. of Electron. & Comput. Technol. ETSIIT, Univ. of Granada, Granada, Spain

fYear

2013

Firstpage

51

Lastpage

54

Abstract

A study of the degradation of the subthreshold swing in a general-purpose pMOSFET is carried out to evaluate its use as a dosimetric parameter. Its reliability in terms of sensitivity, linearity, and reproducibility is experimentally tested and compared with the threshold voltage shift under gamma rays from a 60Co source up to 56 Gy, typical in radiotherapy treatments. The dependence of the subthreshold swing as a function of temperature is characterized and modeled as a mean for thermal compensation when used for dose measurement. Very promising results have been obtained for the subthreshold swing as a complementary dosimetric parameter to the threshold voltage for enhancing the confidence of dose verification systems based on MOSFETs.

Keywords

MOSFET; dosimeters; gamma-rays; radiation therapy; semiconductor device reliability; complementary dosimetric parameter; dose measurement; dose verification systems; gamma rays; general-purpose pMOSFET; linearity; radiation effects; radiotherapy treatments; reliability; reproducibility; sensitivity; subthreshold response; subthreshold swing; thermal compensation; threshold voltage shift; MOSFET circuits; Physics; Semiconductor device measurement; Sensitivity; Temperature measurement; Threshold voltage; Transistors; MOSFET; dosimeter; subthreshold swing; threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2013 Spanish Conference on

Conference_Location

Valladolid

Print_ISBN

978-1-4673-4666-5

Electronic_ISBN

978-1-4673-4667-2

Type

conf

DOI

10.1109/CDE.2013.6481340

Filename

6481340