Title :
A wafer surface temperature measurement method utilizing the reordering phenomena of amorphous silicon
Author :
Yamazawa, Kazuaki ; Arai, Masaru ; Shibata, Satoshi ; Nambu, Yuko ; Izutani, Hisaki ; Morita, Takao
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol.
Abstract :
In the recent years, the importance of relatively low temperatures ranging from 400degC to 600degC is growing for the rapid thermal processes in semiconductor manufacturing. Measurement and evaluation techniques for the temperature distribution on the wafer surface within the manufacturing equipments are essential. Matsushita Electric Industrial Co., SENCorporation and NMIJ/AIST have done research on a novel temperature measurement method for this temperature region that utilizes the reordering phenomena of amorphous silicon, called the REAL method (Really Exposed Temperature Evaluation Using Reordering of Implanted Amorphous Si Layers). In this paper, we present the principle, the advantages, a trial calculation of the measurement uncertainty and the application of the REAL method
Keywords :
amorphous semiconductors; elemental semiconductors; ion implantation; measurement uncertainty; rapid thermal processing; silicon; temperature measurement; 400 to 600 C; REAL method; Si; amorphous silicon; ion implantation; measurement uncertainty; rapid thermal process; reordering phenomena; semiconductor manufacturing; wafer surface temperature measurement; Amorphous materials; Amorphous silicon; Electrical equipment industry; Manufacturing industries; Manufacturing processes; Measurement uncertainty; Rapid thermal processing; Semiconductor device manufacture; Temperature distribution; Temperature measurement; Amorphous Si; reordering; temperature measurement;
Conference_Titel :
SICE-ICASE, 2006. International Joint Conference
Conference_Location :
Busan
Print_ISBN :
89-950038-4-7
Electronic_ISBN :
89-950038-5-5
DOI :
10.1109/SICE.2006.315069
