Title :
A gate drive circuit of power MOSFETs and IGBTs for low switching losses
Author :
Shimizu, Toshihisa ; Wada, Keiji
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Metropolitan Univ., Hachioji
Abstract :
In order to increase the power density of power converters, reduction of the switching losses at a high-frequency switching condition is one of the most important issues. This paper presents a new gate drive circuit that enables to reduce the switching loss on both the power MOSFET and the IGBT. A distinctive feature of this method is that both the turn on loss and the turn off loss can be decreased simultaneously without using the conventional ZVS circuit, such as quasi-resonant adjunctive circuit. Some experimental results of the switching loss of power MOSFET and IGBT used on the buck-chopper circuit is shown and confirmed the effectiveness of the proposed circuit.
Keywords :
choppers (circuits); driver circuits; insulated gate bipolar transistors; power MOSFET; power semiconductor switches; switching convertors; IGBT; buck-chopper circuit; gate drive circuit; high-frequency switching condition; power MOSFET; power converters; switching losses reduction; turn off loss; turn on loss; Capacitors; Circuits; Current transformers; Drives; Insulated gate bipolar transistors; MOSFETs; Mirrors; Power electronics; Switching loss; Voltage;
Conference_Titel :
Power Electronics, 2007. ICPE '07. 7th Internatonal Conference on
Conference_Location :
Daegu
Print_ISBN :
978-1-4244-1871-8
Electronic_ISBN :
978-1-4244-1872-5
DOI :
10.1109/ICPE.2007.4692507