40-Gb/s optical buffer design and simulation

Author

Park, Hyundai ; Burmeister, Emily F ; Björlin, Staffan ; Bowers, John E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2004

Firstpage

19

Lastpage

20

Abstract

This work proposes a new approach to create optical random access memory for 40-Gb/s optical telecommunications. Results of simulations that investigate the maximum achievable delay are also presented. The design combines silica waveguides for low loss recirculation with InP-based semiconductor devices for high gain and fast switching. This approach provides smaller devices in comparison to fiber-based alternatives and lower loss recirculation than competing material systems.

Keywords

III-V semiconductors; indium compounds; integrated optoelectronics; optical communication; optical design techniques; optical losses; optical storage; optical waveguides; packet switching; photonic switching systems; random-access storage; semiconductor device models; 40 Gbit/s; InP; InP-based semiconductor devices; SiO₂; fast switching; high optical gain; low loss recirculation; optical buffer design; optical buffer simulation; optical delay; optical random access memory; optical telecommunications; silica waveguides; Delay; Optical buffering; Optical design; Optical losses; Optical waveguides; Random access memory; Semiconductor devices; Semiconductor waveguides; Silicon compounds; Telecommunication switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2004. NUSOD '04. Proceedings of the 4th International Conference on

Print_ISBN

0-7803-8530-6

Type

conf

DOI

10.1109/NUSOD.2004.1345093

Filename

1345093