Title :
A simple compact model for the junctionless Variable Barrier Transistor (VBT)
Author :
Moldovan, Oana ; Lime, Francois ; Nae, B. ; Iniguez, B.
Author_Institution :
ETSE DEEEA, Univ. Rovira i Virgili (URV), Tarragona, Spain
Abstract :
In this paper we present a simple compact model for the computation of the drain current in a new type of transistor, a junctionless VBT (Variable Barrier Transistor).A good agreement between our results and two TCAD simulation tools (COMSOL and ATLAS), proves the accuracy of this model. It is the first time that a compact drain current model is derived for this type of transistor.
Keywords :
MOSFET; semiconductor device models; technology CAD (electronics); ATLAS; COMSOL; MOSFET; TCAD simulation tool; compact drain current model; junctionless VBT; junctionless variable barrier transistor; Computational modeling; Electric potential; MOSFET circuits; Semiconductor device modeling; Silicon; Transistors; Tunneling;
Conference_Titel :
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location :
Valladolid
Print_ISBN :
978-1-4673-4666-5
Electronic_ISBN :
978-1-4673-4667-2
DOI :
10.1109/CDE.2013.6481344
