Study of RFIDs with SOI technology for UWB

Author

Rodriguez, Roberto ; Gonzalez, Borja ; Garcia, J. ; Marrero-Martin, M. ; Hernandez, A.

Author_Institution

Inst. for Appl. Microelectron. (IUMA), Univ. de Las Palmas de Gran Canaria (ULPGC), Las Palmas de Gran Canaria, Spain

fYear

2013

Firstpage

83

Lastpage

86

Abstract

The objective of this work is to study the possibility of implementing SOI rectifiers for UWB RFIDs with undoped Double Gate MOSFETs (DG-MOSFETs). For that purpose we use two commercial TCAD tools, Sentaurus Device (created by Synopsys) and ADS (created by Agilent), wherein a large signal circuit model derived for the transistors is implemented with Verilog-A. Once the DG-MOSFETs output characteristics are fit, the rectifier performance at high frequencies is simulated; numerical and electrical results are successfully compared.

Keywords

MOSFET; electronic engineering computing; hardware description languages; radiofrequency identification; rectifiers; silicon-on-insulator; technology CAD (electronics); ultra wideband technology; ADS; DG-MOSFET; SOI rectifier technology; Sentaurus device; UWB RFID; Verilog-A; commercial TCAD tools; double gate MOSFET; Integrated circuit modeling; Logic gates; MOSFETs; Numerical models; Radiofrequency identification; Rectifiers; DG-MOSFET; RFIDs; SOI; UWB; rectifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2013 Spanish Conference on

Conference_Location

Valladolid

Print_ISBN

978-1-4673-4666-5

Electronic_ISBN

978-1-4673-4667-2

Type

conf

DOI

10.1109/CDE.2013.6481348

Filename

6481348