Title :
Static and dynamic characteristics of self-assembled InAs-GaAs quantum dot laser considering carrier recombination and carrier escape time by using circuit-level modeling
Author :
Pa, M.R. ; Emami, Farzin
Author_Institution :
Electron. Dept., Islamic Azad Univ., Boushehr, Iran
Abstract :
Considering the excited state and the standard rate equations, this study provides a new circuit model for self-assembled quantum dot laser made by InGaAs/GaAs and investigates the performances of this kind of laser. The carrier dynamic effects on static and dynamic performances of self-assembled laser (QD) have been analyzed. We also show that quantum-dot lasers are quite sensitive to the crystal quality outside as well as inside quantum dots.
Keywords :
III-V semiconductors; electron-hole recombination; equivalent circuits; excited states; gallium arsenide; indium compounds; laser beams; quantum dot lasers; self-assembly; semiconductor device models; InAs-GaAs; QD laser; carrier dynamic effects; carrier escape time; carrier recombination time; circuit-level modeling; crystal quality; dynamic characteristics; excited state; self-assembled quantum dot laser; standard rate equations; static characteristics; Integrated circuit modeling; Laser excitation; Laser modes; Mathematical model; Modulation; Quantum dot lasers; Radiative recombination; equivalent circuit modeling; modulation response; quantum dot lasers; rate equations;
Conference_Titel :
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location :
Valladolid
Print_ISBN :
978-1-4673-4666-5
Electronic_ISBN :
978-1-4673-4667-2
DOI :
10.1109/CDE.2013.6481349
