Static and dynamic characteristics of self-assembled InAs-GaAs quantum dot laser considering carrier recombination and carrier escape time by using circuit-level modeling

Author

Pa, M.R. ; Emami, Farzin

Author_Institution

Electron. Dept., Islamic Azad Univ., Boushehr, Iran

fYear

2013

Firstpage

87

Lastpage

90

Abstract

Considering the excited state and the standard rate equations, this study provides a new circuit model for self-assembled quantum dot laser made by InGaAs/GaAs and investigates the performances of this kind of laser. The carrier dynamic effects on static and dynamic performances of self-assembled laser (QD) have been analyzed. We also show that quantum-dot lasers are quite sensitive to the crystal quality outside as well as inside quantum dots.

Keywords

III-V semiconductors; electron-hole recombination; equivalent circuits; excited states; gallium arsenide; indium compounds; laser beams; quantum dot lasers; self-assembly; semiconductor device models; InAs-GaAs; QD laser; carrier dynamic effects; carrier escape time; carrier recombination time; circuit-level modeling; crystal quality; dynamic characteristics; excited state; self-assembled quantum dot laser; standard rate equations; static characteristics; Integrated circuit modeling; Laser excitation; Laser modes; Mathematical model; Modulation; Quantum dot lasers; Radiative recombination; equivalent circuit modeling; modulation response; quantum dot lasers; rate equations;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2013 Spanish Conference on

Conference_Location

Valladolid

Print_ISBN

978-1-4673-4666-5

Electronic_ISBN

978-1-4673-4667-2

Type

conf

DOI

10.1109/CDE.2013.6481349

Filename

6481349