Title :
Monte Carlo simulation of temperature and confinement dependent spin transport in germanium nanowire
Author :
Salimath, A.K. ; Chishti, S.S. ; Verma, A. ; Bishnoi, B. ; Ghosh, Bablu
Author_Institution :
Dept. of EE, IIT Kanpur, Kanpur, India
Abstract :
In this paper spin polarized transport in Ge nanowires is studied by employing semiclassical Monte Carlo approach. Monte Carlo [2] approach is used since it is able to update spin evolution dynamically in step with the momentum evolution due to electron transport. Spin dephasing in Ge nanowire is caused by D´yakonov-Perel´ relaxation[3,4] due to structural inversion asymmetry (Rashba spin-orbit coupling). Spin flip due to Elliott-Yafet[3] is also taken into account in the simulation, Spin relaxation is investigated in germanium nanowire with varying temperature and varying confinement. Electrons are injected polarized in z direction. The wire cross section is varied between 2×2 nm2 and 10×10 nm2.
Keywords :
Monte Carlo methods; electron transport theory; germanium; magnetic relaxation; magnetoelectronics; nanowires; spin polarised transport; Dyakonov-Perel relaxation; Monte Carlo simulation; Rashba spin-orbit coupling; confinement dependent spin transport; electron transport; germanium nanowire; momentum evolution; semiclassical Monte Carlo approach; spin dephasing; spin evolution; spin flip; spin polarized transport; spin relaxation; spintronics; structural inversion asymmetry; wire cross section; Germanium; Impurities; Monte Carlo methods; Phonons; Rough surfaces; Scattering; Surface roughness; Ge Nanowire; Monte Carlo method; Scattering; Spin relaxation lengths; Spintronics;
Conference_Titel :
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location :
Valladolid
Print_ISBN :
978-1-4673-4666-5
Electronic_ISBN :
978-1-4673-4667-2
DOI :
10.1109/CDE.2013.6481375