DocumentCode
1601572
Title
Monte Carlo simulation of temperature and confinement dependent spin transport in germanium nanowire
Author
Salimath, A.K. ; Chishti, S.S. ; Verma, A. ; Bishnoi, B. ; Ghosh, Bablu
Author_Institution
Dept. of EE, IIT Kanpur, Kanpur, India
fYear
2013
Firstpage
191
Lastpage
194
Abstract
In this paper spin polarized transport in Ge nanowires is studied by employing semiclassical Monte Carlo approach. Monte Carlo [2] approach is used since it is able to update spin evolution dynamically in step with the momentum evolution due to electron transport. Spin dephasing in Ge nanowire is caused by D´yakonov-Perel´ relaxation[3,4] due to structural inversion asymmetry (Rashba spin-orbit coupling). Spin flip due to Elliott-Yafet[3] is also taken into account in the simulation, Spin relaxation is investigated in germanium nanowire with varying temperature and varying confinement. Electrons are injected polarized in z direction. The wire cross section is varied between 2×2 nm2 and 10×10 nm2.
Keywords
Monte Carlo methods; electron transport theory; germanium; magnetic relaxation; magnetoelectronics; nanowires; spin polarised transport; Dyakonov-Perel relaxation; Monte Carlo simulation; Rashba spin-orbit coupling; confinement dependent spin transport; electron transport; germanium nanowire; momentum evolution; semiclassical Monte Carlo approach; spin dephasing; spin evolution; spin flip; spin polarized transport; spin relaxation; spintronics; structural inversion asymmetry; wire cross section; Germanium; Impurities; Monte Carlo methods; Phonons; Rough surfaces; Scattering; Surface roughness; Ge Nanowire; Monte Carlo method; Scattering; Spin relaxation lengths; Spintronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location
Valladolid
Print_ISBN
978-1-4673-4666-5
Electronic_ISBN
978-1-4673-4667-2
Type
conf
DOI
10.1109/CDE.2013.6481375
Filename
6481375
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