Simulation of bandgap in MOVPE selective area growth of InGaAsP-based photonic integrated circuits

Author

Amin, Ahdullah AI ; Doi, Takeshi ; Sakurai, Kenji ; Zhenrui Zhang ; Song, Xueliang ; Sugiyama, Masakazu ; Nakano, Yoshiaki

Author_Institution

Dept. of Electron. Eng., Tokyo Univ., Japan

fYear

2004

Firstpage

25

Lastpage

26

Abstract

A good deal of consideration is needed in designing the growth masks to get the intended bandgap profile due to a complex interplay of chemical reactions and physical effects such as gas phase diffusion and surface migration. This work presents a simulation tool for selective area growth metal-organic vapor epitaxy (SAG-MOVPE) of InGaAsP-based photonic integrated circuits.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; photonic band gap; reaction rate constants; semiconductor device models; semiconductor growth; semiconductor quantum wells; surface diffusion; vapour phase epitaxial growth; InGaAsP; MOVPE selective area growth; bandgap profile; bandgap simulation; chemical reactions; gas phase diffusion; growth masks; metal-organic vapor epitaxy; multiple quantum wells; photonic integrated circuits; physical effects; surface migration; surface reaction rate constant; Arrayed waveguide gratings; Artificial intelligence; Circuit simulation; Epitaxial growth; Epitaxial layers; Optical surface waves; Optical waveguides; Photonic band gap; Photonic integrated circuits; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2004. NUSOD '04. Proceedings of the 4th International Conference on

Print_ISBN

0-7803-8530-6

Type

conf

DOI

10.1109/NUSOD.2004.1345127

Filename

1345127