Title :
Peak emission wavelength tuning for Light Emitting Diodes and lasers for InGaN — deltaInyGa1−yN Quantum Well by varying the composition of the delta well
Author :
Biswas, Santosh ; Mahbub, Ifana ; Islam, Md Shariful ; Biswas, Santosh
Author_Institution :
Sch. of Eng. & Comput. Sci., Indep. Univ. Bangladesh, Dhaka, Bangladesh
Abstract :
Four InGaN-delta InyGa1-yN Quantum Wells (QW) with four different values of y (1, 0.9, 0.8, 0.7) were investigated through the numerical solution of a k.p Hamiltonian with the Finite Difference Method (FDM). The spontaneous emission spectra and optical gain spectra of the four structures have been found to have a definite pattern where increasing the value of y gradually shifted the spectra toward the higher energy regions. The electron-hole ground state overlaps were not found to change by a great amount. Increasing y brought about a predictable shift of the spectra toward the higher energy regions at the expense of electron-hole wave function overlap.
Keywords :
III-V semiconductors; electron-hole recombination; finite difference methods; gallium compounds; ground states; indium compounds; k.p calculations; laser tuning; light emitting diodes; quantum well lasers; semiconductor quantum wells; spectral line shift; spontaneous emission; wave functions; wide band gap semiconductors; FDM; InGaN-InyGa1-yN; delta well composition; electron-hole ground state; electron-hole wavefunction; finite difference method; higher energy regions; k.p Hamiltonian; light emitting diodes; numerical solution; optical gain spectra; peak emission wavelength tuning; quantum well lasers; spectral shift; spontaneous emission spectra; Charge carrier processes; Gallium nitride; Quantum well lasers; Spontaneous emission; Stimulated emission; Strain; InGaN; InN; delta; gainspectra;
Conference_Titel :
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location :
Valladolid
Print_ISBN :
978-1-4673-4666-5
Electronic_ISBN :
978-1-4673-4667-2
DOI :
10.1109/CDE.2013.6481379