Title :
Genetic algorithm-based parameter-extraction for power GaAs MESFET
Author_Institution :
Chang´´an Univ., Xi´´an, China
fDate :
6/23/1905 12:00:00 AM
Abstract :
A modified genetic algorithm is presented for parameter extraction of small signal equivalent of microwave power GaAs MESFET. A new approach of genetic algorithm-based model in the paper is applied to determine the equivalent circuit elements of GaAs MESFET directly from measured S-parameters biased in the active region. The results of calculation show that the method presented is suitable for microwave application
Keywords :
III-V semiconductors; S-parameters; equivalent circuits; gallium arsenide; genetic algorithms; microwave field effect transistors; microwave power transistors; power MESFET; semiconductor device models; GaAs; GaAs microwave power MESFET; S-parameters; genetic algorithm; parameter extraction; small-signal equivalent circuit model; Biological cells; Equivalent circuits; Gallium arsenide; Genetic algorithms; MESFET circuits; Microwave theory and techniques; Optimization methods; Parameter extraction; Performance analysis; Scattering parameters;
Conference_Titel :
Telecommunications in Modern Satellite, Cable and Broadcasting Service, 2001. TELSIKS 2001. 5th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-7228-X
DOI :
10.1109/TELSKS.2001.954900
