Title :
GaAs piezoelectric modulated resistors for sensor
Author :
Huang Qing-An ; Tong Qin-Yi ; Lu Shi-Ji
Author_Institution :
Microelectron. Center, Southeast Univ., Nanjing, China
Abstract :
The authors report the development of GaAs piezoelectric modulated resistors which are very sensitive to stress. A model of the resistors is presented, and simple cantilever experiments confirm that the piezoelectric modulated effect exists in GaAs. The effect is expected to be applied to the monolithic integration of mechanical sensors and signal processing circuits.<>
Keywords :
III-V semiconductors; electric sensing devices; gallium arsenide; micromechanical devices; piezoelectric transducers; resistors; stress measurement; GaAs piezoelectric modulated resistors; III-V semiconductor; cantilever; mechanical sensors; monolithic integration; signal processing circuits; stress sensor; Clamps; Doping; Electrons; Gallium arsenide; Geometry; Piezoelectric effect; Piezoelectric films; Piezoelectric polarization; Resistors; Tensile stress;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.149036
