• DocumentCode
    1601724
  • Title

    Gain dependent avalanche duration and gain × bandwidth product in an avalanche photodiode

  • Author

    Groves, C. ; David, J.P.R. ; Rees, G.J.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
  • fYear
    2004
  • Firstpage
    30
  • Lastpage
    31
  • Abstract
    This study calculates the probability distributions of gain and duration, fM,T(M,T) for an avalanche photodiode. This work assumes both constant and enhanced velocities to ionisation and compares their effects on gain × bandwidth product.
  • Keywords
    avalanche photodiodes; impact ionisation; statistical distributions; stochastic processes; avalanche photodiode; constant velocities; enhanced velocities; gain × bandwidth product; gain dependent avalanche duration; impact ionisation; probability distributions; stochastic process; Absorption; Avalanche photodiodes; Bandwidth; Charge carrier processes; Delay; Electrons; Impact ionization; Probability distribution; Space exploration; Stochastic processes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices, 2004. NUSOD '04. Proceedings of the 4th International Conference on
  • Print_ISBN
    0-7803-8530-6
  • Type

    conf

  • DOI
    10.1109/NUSOD.2004.1345131
  • Filename
    1345131
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1601724