Title :
Conduction band-valence band coupling effects on the band structure of In0.28Ga0.72N/GaN Quantum Well
Author :
Biswas, Santosh ; Mahbub, Ifana ; Islam, Md Shariful
Author_Institution :
Sch. of Eng. & Comput. Sci., Indep. Univ. Bangladesh, Dhaka, Bangladesh
Abstract :
A quantitative measure of how much the inclusion of the conduction band-valence band coupling effects influence the band structure was obtained. The numerical results of two formalisms were derived using Finite Difference Method (FDM) where one formalism ignores the coupling effects between conduction and valence bands. It was found that the conduction band- valence band coupling effects significantly affects the band structure of typical InGaN Quantum Wells (QW) especially the conduction subbands.
Keywords :
III-V semiconductors; conduction bands; finite difference methods; gallium compounds; indium compounds; semiconductor quantum wells; valence bands; wide band gap semiconductors; In0.28Ga0.72N-GaN; band structure; conduction band-valence band coupling effects; finite difference method; inclusion; quantum well; Couplings; Educational institutions; Effective mass; Electric fields; Equations; Gallium nitride; Mathematical model; GaN; InGaN; conduction sub-bands; valence sub-bands;
Conference_Titel :
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location :
Valladolid
Print_ISBN :
978-1-4673-4666-5
Electronic_ISBN :
978-1-4673-4667-2
DOI :
10.1109/CDE.2013.6481380
