DocumentCode :
1601966
Title :
Laser induced single events in SRAMs
Author :
Palomar, C. ; Lopez-Calle, I. ; Franco, F.J. ; Agapito, J.A. ; Izquierdo, J.G.
Author_Institution :
Dipt. Fis. Aplic. III, Univ. Complutense de Madrid, Madrid, Spain
fYear :
2013
Firstpage :
253
Lastpage :
256
Abstract :
This paper is aimed at emulating the errors in semiconductor memories by space radiation with a pulsed laser that acts as an ion. A sensitivity map of the memory is performed identifying potential error areas and how many errors simultaneously occur.
Keywords :
SRAM chips; laser beam effects; radiation hardening (electronics); SRAM; error emulation; laser induced single events; pulsed laser; semiconductor memory; sensitivity map; space radiation; Microprocessors; Performance evaluation; Polymers; Radiation effects; Semiconductor lasers; Sensitivity; Laser; MCU; SEU; errors; memory; sensitivity map;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location :
Valladolid
Print_ISBN :
978-1-4673-4666-5
Electronic_ISBN :
978-1-4673-4667-2
Type :
conf
DOI :
10.1109/CDE.2013.6481390
Filename :
6481390
Link To Document :
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