DocumentCode :
1601993
Title :
Examination of X-pinch dynamics using a low current (25kA) and slower rising (400ns) pulse
Author :
Collins, G.W. ; Valdivia, M.P. ; Zick, T.O. ; Kozlowski, P. ; Madden, R.E. ; Beg, F.N. ; Haines, M.G.
Author_Institution :
Center for Energy Res., Univ. of California, San Diego, La Jolla, CA, USA
fYear :
2013
Firstpage :
1
Lastpage :
1
Abstract :
Summary form only given. We present results examining the dynamics of low current (25kA), long rise-time (400 ns) X-pinches. These are the lowest parameters yet used for X-pinch experiments. The X-pinches comprised either 2 or 4 wires of 5μm tungsten. We analyze coronal and axial plasma dynamics, cross-point evolution, X-ray emission, and post-pinching dissipation of the structure. Data shows that the pinch dynamics produced here is akin to those in X-pinches driven by 0.1-1 MA and at rise-rates from 0.25-10kA/ns. Silicon PIN diodes detected X-rays (~1-2keV range) emitted from the cross point in both the two-wire and four-wire configurations near peak current. These results suggest that compact pulsed power drivers consisting of 2-4 small capacitors in a simple capacitive discharge circuit can produce good quality pinches for a variety of possible applications including point-projection radiography, Thompson X-ray scattering, and laboratory astrophysical modeling. Additionally, we will present a model for determining the emission time of harder x-rays due to the onset of anomalous resistivity.
Keywords :
X-ray scattering; pinch effect; plasma transport processes; radiography; tungsten; Thompson X-ray scattering; X-ray emission time; anomalous resistivity onset; axial plasma dynamics; capacitive discharge circuit; capacitors; compact pulsed power drivers; coronal plasma dynamics; cross point; cross-point evolution; current 0.1 MA to 1 MA; current 25 kA; four-wire configuration; laboratory astrophysical modeling; low current long rise-time X-pinch dynamics; low current pulse; peak current; point-projection radiography; post-pinching dissipation; rise-rates; silicon PIN diodes; size 5 mum; slower rising pulse; time 400 ns; tungsten wires; two-wire configuration; Educational institutions; Integrated circuit modeling; Laboratories; Plasmas; Silicon; Tungsten; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science (ICOPS), 2013 Abstracts IEEE International Conference on
Conference_Location :
San Francisco, CA
ISSN :
0730-9244
Type :
conf
DOI :
10.1109/PLASMA.2013.6635212
Filename :
6635212
Link To Document :
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