Title :
New approach of crystal growth and characterization of a quartz and berlinite isomorph: GaPO4
Author :
Philippot, E. ; Ibanez, A. ; Goiffon, A. ; Zarka, A. ; Schwartzel, J. ; Détaint, J.
Author_Institution :
LPCMS, CNRS, Montpellier, France
Abstract :
GaPO4 crystal growth in sulfuric and phosphoric acid media through the slow heating and vertical reverse temperature gradient methods is discussed. The systematic study of growth parameters shows a Vχ growth rate always much greater than V z and Vy. It is possible to epitaxially grow GaPO4 on large berlinite seeds in sulfuric acid and to use them for GaPO4 crystal growth in phosphoric acid. The epitaxial process and crystalline quality are analyzed by X-ray topography. Infrared spectrometry proves a lower OH concentration than in the berlinite case for approximately the same crystal growth conditions. First piezoelectric characterizations for resonators near the AT-cut show GaPO4 to be a very promising piezoelectric material with a large coupling coefficient near 16%, a quartzlike thermal stability, and a Q factor nearly sufficient for the applications
Keywords :
crystal growth from solution; crystal resonators; gallium compounds; liquid phase epitaxial growth; piezoelectric materials; IR spectrometry; Q factor; X-ray topography; coupling coefficient; crystal growth; crystalline quality; epitaxial process; growth parameters; piezoelectric characterizations; piezoelectric material; resonators; slow heating; thermal stability; vertical reverse temperature gradient methods; Crystallization; Gradient methods; Heating; Infrared spectra; Piezoelectric materials; Spectroscopy; Surfaces; Temperature; Thermal factors; Thermal stability;
Conference_Titel :
Frequency Control Symposium, 1992. 46th., Proceedings of the 1992 IEEE
Conference_Location :
Hershey, PA
Print_ISBN :
0-7803-0476-4
DOI :
10.1109/FREQ.1992.269962
