Intermixing in InAsP/InP quantum wells induced by dry etching processes

Author

Hortelano, Vanesa ; TORRES, ABEL ; Sanz, M. ; Jimenez, Joaquin ; Martinez, Oscar ; Landesman, J.P.

Author_Institution

Dept. de Fis. de la Materia, Condensada Univ. de Valladolid, Valladolid, Spain

fYear

2013

Firstpage

273

Lastpage

276

Abstract

InP ridge waveguides with different dimensions, height and width, were fabricated by inductively coupled plasma etching. The InP raw material was provided of nine buried InAsP quantum wells with variable composition and at different depths, in order to study the damage produced in the structure by the dry etching process. The etched guides were studied by spectrally resolved cathodoluminescence. The changes induced in the quantum wells by different etching chemistries were analyzed. Other parameters as the etching time, and guide dimensions were considered.

Keywords

III-V semiconductors; arsenic compounds; cathodoluminescence; etching; indium compounds; ridge waveguides; semiconductor quantum wells; InAsP-InP; dry etching process; etching chemistries; etching guide dimension; etching time; inductively coupled plasma etching; intermixing; quantum wells; raw material; ridge waveguide; spectrally resolved cathodoluminescence; structure damage; Chemistry; Dry etching; Indium phosphide; Iterative closest point algorithm; Optical waveguides; Plasmas; Cathodoluminescence quantum well intermixing; etching; inductive coupled plasma;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2013 Spanish Conference on

Conference_Location

Valladolid

Print_ISBN

978-1-4673-4666-5

Electronic_ISBN

978-1-4673-4667-2

Type

conf

DOI

10.1109/CDE.2013.6481395

Filename

6481395