Calculated voltage characteristics for tunnel junctions in double cavity long-wavelength surface emitting lasers

Author

Mehta, Manish ; Bjorlin, E. Staffan ; Bowers, John E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2004

Firstpage

51

Lastpage

52

Abstract

This work presents a breakdown of the voltage contributions from various parts of the structure. The device layout delimits several key contributors to the total voltage of the device: the voltage due to lateral spreading resistance of the two intracavity contacts, the voltage due to the series resistance of vertical transport through the p-cladding layer, the active region diode, and the tunnel junction (TJ). Since TJs in VCSELs based on the InP material system are still a maturing technology, we focus most of our effort on developing a thorough model for the tunnel junction in hopes of improving our TJ for future VCSEL devices.

Keywords

contact resistance; electrical contacts; laser cavity resonators; semiconductor device models; semiconductor lasers; surface emitting lasers; InP material system; VCSEL; active region diode; double cavity lasers; intracavity contacts; lateral spreading resistance; long-wavelength lasers; p-cladding layer; series resistance; surface emitting lasers; tunnel junctions; vertical transport; voltage characteristics; Breakdown voltage; Communication industry; Computer industry; Contact resistance; Diodes; Distributed Bragg reflectors; Doping; Photonic band gap; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2004. NUSOD '04. Proceedings of the 4th International Conference on

Print_ISBN

0-7803-8530-6

Type

conf

DOI

10.1109/NUSOD.2004.1345148

Filename

1345148