Title :
Defect assessment and leakage control in atomic layer deposited Al2O3 and HfO2 dielectrics
Author :
Gonzalez, M.B. ; Rafi, J.M. ; Beldarrain, O. ; Zabala, M. ; Campabadal, F.
Author_Institution :
Inst. de Microelectron. de Barcelona, CNM, Barcelona, Spain
Abstract :
In this work, a systematic study of the electrical characteristics of Al2O3 and HfO2 dielectrics based MOS capacitors is presented enabling the analysis of the impact of pre-existing electrically active defects, stress induced degradation and the dielectric breakdown phenomena on the leakage current behavior.
Keywords :
MOS capacitors; alumina; atomic layer deposition; electric breakdown; hafnium compounds; leakage currents; Al2O3; HfO2; MOS capacitors; atomic layer deposited dielectrics; defect assessment; dielectric breakdown phenomena; leakage control; leakage current behavior; stress induced degradation; Aluminum oxide; Atomic layer deposition; Capacitors; Films; Hafnium compounds; Logic gates; A12O3; ALD; Charge trapping; Defect generation; Hf02;
Conference_Titel :
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location :
Valladolid
Print_ISBN :
978-1-4673-4666-5
Electronic_ISBN :
978-1-4673-4667-2
DOI :
10.1109/CDE.2013.6481396
