Comprehensive physics-based intensity noise simulation of VCSELs

Author

Odermatt, S.

Author_Institution

Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland

fYear

2004

Firstpage

57

Lastpage

58

Abstract

One- and two-dimensional (1D and 2D) simulations are performed at 980 nm oxide-confined InGaAs-AlGaAs VCSELs consisting of one or of five quantum wells (QWs). It is found that the VCSEL having five QWs has lower intensity noise than the other. The reason found is that the total spontaneous emission, which is proportional to the relative intensity noise (RIN), is decreased through the asymmetry of electrons and holes in the multiple QW case. The simulations are compared to measured RIN spectra and good agreement is found.

Keywords

laser cavity resonators; laser noise; quantum well lasers; semiconductor device models; spontaneous emission; surface emitting lasers; 980 nm; InGaAs-AlGaAs; InGaAs-AlGaAs VCSEL; RIN spectra; VCSEL; comprehensive physics-based simulation; electron asymmetry; hole asymmetry; intensity noise simulation; multiple quantum well; one-dimensional simulation; oxide-confined VCSEL; quantum wells; relative intensity noise; spontaneous emission; two-dimensional simulation; Integral equations; Laser noise; Noise generators; Optical noise; Optical scattering; Poisson equations; Radiative recombination; Semiconductor device noise; Spontaneous emission; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2004. NUSOD '04. Proceedings of the 4th International Conference on

Print_ISBN

0-7803-8530-6

Type

conf

DOI

10.1109/NUSOD.2004.1345151

Filename

1345151