Title :
Nominal PbSe nano-islands on PbTe: grown by MBE, analyzed by AFM and TEM
Author :
Moeck, Peter ; Kapilashrami, Mukes ; Lee, Jeahuck ; Morris, James E. ; Browning, Nigel D. ; McCann, Patrick J.
Author_Institution :
Dept. of Phys., Portland State Univ., OR, USA
Abstract :
Nominal PbSe nano-islands were grown in the Stranski-Krastanow mode on (111) oriented PbTe/BaF2 pseudo-substrates by molecular beam epitaxy (MBE). The morphology and number density of these islands were assessed by means of atomic force microscopy (AFM). Transmission electron microscopy (TEM) was employed to determine the strain state and crystallographic structure of these islands. On the basis of both AFM and TEM analyses, we distinguish between different groups of islands.
Keywords :
barium compounds; crystallography; lead compounds; molecular beam epitaxial growth; nanostructured materials; semiconductor quantum dots; surface morphology; AFM; BaF2; MBE; PbSe; PbTe; TEM; atomic force microscopy; barium fluoride substrates; crystallographic structure; lead selenide nano-islands; lead telluride; molecular beam epitaxy; morphology; number density; semiconductor quantum dots; strain state; transmission electron microscopy; Atomic force microscopy; Atomic layer deposition; Capacitive sensors; Charge carrier processes; Lead compounds; Molecular beam epitaxial growth; Quantum dot lasers; Quantum dots; Semiconductor lasers; Transmission electron microscopy;
Conference_Titel :
Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004. 27th International Spring Seminar on
Print_ISBN :
0-7803-8422-9
DOI :
10.1109/ISSE.2004.1490383
