The Intermediate Band approach in the third solar cell generation context

Author

Gonzalez-Diaz, G. ; Martil, I. ; del Prado, A. ; Pastor, Dominique ; Garcia-Hemme, E. ; Garcia-Hernansanz, R. ; Wahnon, P. ; Olea, J.

Author_Institution

Dipt. de Fis. Aplieada III, Univ. Complutense de Madrid, Madrid, Spain

fYear

2013

Firstpage

297

Lastpage

300

Abstract

Within the framework of the third solar cell generation some new ideas to enlarge the spectral response of the solar cells toward the infrared have been proposed. Among them the inclusion of an Intermediate Band (IB) seems to be very promising. This paper will deal with one of the ways to generate the IB namely the deep level center approach. We will discuss not only its existence but also the carriers lifetime recovery which is necessary to obtain the expected increase of the solar cell efficiency.

Keywords

solar cells; IB; carriers lifetime recovery; deep level center approach; intermediate band approach; solar cell efficiency; spectral response; third solar cell generation context; Charge carrier lifetime; Electrical resistance measurement; Photovoltaic cells; Resistance; Silicon; Substrates; Temperature measurement; Titanium; intermediate band; ion implantation; pulsed laser melting; silicon; solar cells; vanadium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2013 Spanish Conference on

Conference_Location

Valladolid

Print_ISBN

978-1-4673-4666-5

Electronic_ISBN

978-1-4673-4667-2

Type

conf

DOI

10.1109/CDE.2013.6481401

Filename

6481401