Title :
The Intermediate Band approach in the third solar cell generation context
Author :
Gonzalez-Diaz, G. ; Martil, I. ; del Prado, A. ; Pastor, Dominique ; Garcia-Hemme, E. ; Garcia-Hernansanz, R. ; Wahnon, P. ; Olea, J.
Author_Institution :
Dipt. de Fis. Aplieada III, Univ. Complutense de Madrid, Madrid, Spain
Abstract :
Within the framework of the third solar cell generation some new ideas to enlarge the spectral response of the solar cells toward the infrared have been proposed. Among them the inclusion of an Intermediate Band (IB) seems to be very promising. This paper will deal with one of the ways to generate the IB namely the deep level center approach. We will discuss not only its existence but also the carriers lifetime recovery which is necessary to obtain the expected increase of the solar cell efficiency.
Keywords :
solar cells; IB; carriers lifetime recovery; deep level center approach; intermediate band approach; solar cell efficiency; spectral response; third solar cell generation context; Charge carrier lifetime; Electrical resistance measurement; Photovoltaic cells; Resistance; Silicon; Substrates; Temperature measurement; Titanium; intermediate band; ion implantation; pulsed laser melting; silicon; solar cells; vanadium;
Conference_Titel :
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location :
Valladolid
Print_ISBN :
978-1-4673-4666-5
Electronic_ISBN :
978-1-4673-4667-2
DOI :
10.1109/CDE.2013.6481401
