An efficient model for quantum well saturable absorber dynamics

This study proposes a new, simplified delay-differential approach intended at simulating the device properties at high bias, when the diffusion is not significant and can be neglected. This formalism is free from the limitations of the drift-diffusion method, and at the same time offers a qualitative increase in the computational efficiency, which makes it attractive for use as a part of complex simulation procedures for modelling and optimisation of realistic device dynamic behaviour, and thus potentially for implementation in efficient device simulators.