DocumentCode
1602360
Title
Transport in graphene on BN and SiC
Author
Ferry, D.K.
Author_Institution
Sch. of Electr., Arizona State Univ., Tempe, AZ, USA
fYear
2012
Firstpage
1
Lastpage
5
Abstract
We study the mobility and high field velocity in graphene placed upon BN or SiC. The transport is subject to the intrinsic phonons in graphene, as well as flexural modes, remote polar modes from the BN or SiC and impurities sited between the BN layer and the underlying oxide.
Keywords
Monte Carlo methods; boron compounds; carrier mobility; graphene; phonons; silicon compounds; velocity; BN layer; C-BN; C-SiC; SiC; flexural modes; graphene transport; high field velocity; impurities; intrinsic phonons; mobility; polar modes; Atmospheric measurements; Educational institutions; Particle measurements; Scattering; Silicon carbide; graphene; mobility; velocity;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location
Birmingham
ISSN
1944-9399
Print_ISBN
978-1-4673-2198-3
Type
conf
DOI
10.1109/NANO.2012.6322126
Filename
6322126
Link To Document