Title :
Low cost spray-coating boron diffusion on n-type silicon
Author :
Astorga, E.N. ; Martinez, E.O. ; Barrado, J.R.R.
Author_Institution :
Lab. de Mater. y Superficies, Univ. de Malaga (UMA), Malaga, Spain
Abstract :
A low cost spray-coating technique is implemented to study the boron diffusion in n-type silicon wafers. Temperature and diffusion time have been the main factors on the resulting sheet resistance (Rsheet), reaching the highest values at high temperatures and diffusion times due to the formation of a thick borosilicate glass layer on the wafer surface. This layer has been etched off by HF dipping resulting on more doped emitters. Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) measurements have been carried out in order to analyze the correlation of Rsheet with the amount of sprayed precursor.
Keywords :
boron; borosilicate glasses; elemental semiconductors; etching; high-temperature effects; secondary ion mass spectra; silicon; spray coating techniques; spray coatings; surface diffusion; surface resistance; time of flight mass spectra; B2O3-SiO2; HF dipping; Si:B; TOF-SIMS; diffusion time; doped emitters; etching; high temperature effects; low-cost spray-coating boron diffusion; n-type silicon wafers; sheet resistance; sprayed precursor; thick borosilicate glass layer; time-of-flight secondary ion mass spectrometry; Boron; Doping; Photovoltaic cells; Photovoltaic systems; Silicon; back surface field; boron diffusion; spray-coating;
Conference_Titel :
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location :
Valladolid
Print_ISBN :
978-1-4673-4666-5
Electronic_ISBN :
978-1-4673-4667-2
DOI :
10.1109/CDE.2013.6481408
